Spin-on stacked films for low-k_(eff) dielectrics

摘要

The 2000 International Technology Roadmap for Semicon- ductors has identified the production requirements of low-k dielectrics extending over three device generations. The question facing the industry is "What is the best method for depositing low-k films: spin-on or CVD?" This article proposes a pathway that will address the capability, extendibil-ity, and manufacturability options afforded by the use of spin-on low-k dielectrics in meeting the ITRS requirements and 300mm production needs.