Fine control of low-temperature CVD epitaxial growth

摘要

In new generations of semiconductor devices, the composition of silicon-based epitaxial films becomes increasingly more complex, with the addition of not only dopants such as boron, arsenic, or phosphorus, but also germanium and, in some cases, carbon. Precise knowledge of deposition rates and atomic incorporation of various species into silicon is critical. Indeed, the continuing miniaturization of devices imposes more and more stringent requirements on the control of thickness and chemical composition of deposited films. Grading of incorporated species, such as germanium, in silicon-based films in exact conformance with a desired concentration profile is another challenge in device fabrication. Reduced pressure epitaxial CVD systems are demonstrating that they can achieve the required device profiles.