Development and advantages of step-and-flash lithography

摘要

A yet unheralded alternative for future lithography, step-and- flash imprint lithography, appears to be an inexpensive method for pattern generation capable of sub-100nm resolution on silicon wafers. Researchers at the University of Texas have been analyzing various process options on a tool in place there and have shown that this process has several advantages over comparable compression imprinting techniques for applications that require precision layer-to-layer alignment error measurement. It is capable of high-resolution patterning at room temperature with 2-3 pounds applied pressure. The process uses chemicals that are commercially available for sub-100nm patterns. Development work has been so promising that commercialization is under way.