Transistor performance: the impact of implant doping accuracy

摘要

Transistor fabrication requirements are emerging as the next critical set of challenges to continue ITRS-dnven progress. Doping accuracy for parametric.and conductive implant applications is especially important for sub-0.13um-generation devices. As shown here, TCAD simulations can be used to understand how equipment factors, such as implant angle accuracy, affect device performance.