Process technology update: Progress on all fronts

摘要

The creation of ultra-shallow junctions (USJs) has driven significant recent developments in ion implantation, thermal processing, and metrology. Lenny Rubin, principal scientist at Axcelis Technologies, reports that the challenges for the near future are now less scientific and more in the area of equipment engineering: "It is now clear that conventional mass-analyzed ion implantation and RTP annealing will be adequate for producing both n- and p-type source/drain extension regions that simultaneously meet the ITRS requirements for sheet resistivity, junction depth, and lateral abruptness for at least the l00nm device node.