An effective method for removing photoresist and post-etch polymers at the transistor gate level, while removing less oxide than more traditional HF wet cleans, has Been developed. This low-temperature clean process, which utilizes an O_2, CF_4, and H_2O (gas) chemistry with both radio frequency and downstream microwave plasma excitation, is shown to have no impact on gate oxide integrity and capacitance-voltage performance.
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