The impact of airborne molecular bases on DUV photoresists

摘要

Exhaustive examination of resist characteristics for well- known parameters such as isolated and dense feature resolution, adhesion, and etch selectivity is ongoing. Sensitivity of resists to airborne molecular bases adds yet another parameter to be characterized. In an effort to bring the latest-generation processes into production more quickly, many device manufacturers have implemented several levels of safeguards to protect resists from bases such as ammonia, NMP, and TMA. This article compares the sensitivities of four commercially available DUV resists to a number of airborne molecular bases.