248nm and 193nm lithography for damascene patterning

摘要

A bi-layer 248nm photoresist system has clear advantages for dual damascene processes, particularly for solving planarization and dry etch resistance issues, without giving up lithographic performance. Work at IMEC has proven the capabilities of this process for 180nm technology. A,similar system is available for 193nm lithography, and IMEC engineers expect similar results can be achieved soon for 130nm and even 100nm technology.