ALD Hf-based oxides

摘要

Charge trapping and electron mobility degradation in MOSFET performance are the most serious challenges to the integration of high-k dielectric materials. The hydroxyl ion, OH~-, a prevailing impurity in H_2O-based high-k dielectric films and a major source of fixed and trapped charges, can be eliminated by using ozone as an oxidant in lieu of H_2O. Superior Hf-silicate films were developed using ozone in a showerhead-type atomic layer deposition reactor with volatile liquid precursors producing quality high-k gate dielectrics suitable for the 65nm technology node.