Optimized dispense recipes and 20nm filtration for reducing resist defects

摘要

Point-of-use chemical filtration for 193nm photoresists and bottom antireflective coating (BARC) formulations has become a crucial issue as semiconductor manufacturers struggle with defect densities in next-generation processes. In this article, collaboration and tests demonstrate how 20nm filtration, combined with optimized resist-pump setup and dispense recipes, can significantly reduce defects in 193nm lithography.