Taking the wet-developable route to applying BARC in implant layers

摘要

Traditionally, bottom antireflective coatings (BARG) have mainly been used in critical layers for gates and contacts, but the application of BARC in implant layers also has become more desirable as device feature sizes shrink. Using BARC in implant layers promises greater tolerance for reflective notching and CD variations when wafer topography becomes smaller, but the feasibility of traditional dry-etch coatings is questionable due to process complexity, defectivity, and the potential for substrate damage. A wet-developable BARC tailored for implant layers promises to overcome these barriers.