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Challenges and advances for CMP consumables

机译:CMP耗材的挑战和进步

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摘要

In the early days of CMP, most of the focus was on developing the technology as a relatively stable process and enabling its usefulness, particularly for dielectric CMP. This was followed by tungsten CMP, which gained broad acceptance in the mid-1990s. Next came the adoption of copper CMP, followed by direct shallow-trench isolation (STI) polish. As new materials are continuously introduced, CMP innovation is expected to keep pace for polishing these materials (e.g., platinum). With CMP widely accepted, the focus has shifted to increasing productivity: less downtime and development of new slurries and processes with higher removal rates and throughput. Yield enhancement, mainly through defect reduction, has also gained attention. This has been achieved through better manufacturing and design of slurries and pads, as well as polishing tool and process improvements.
机译:在CMP的早期,大多数关注点是将技术开发为相对稳定的过程并使其具有实用性,特别是对于介电CMP。其次是钨CMP,在1990年代中期得到了广泛的接受。接下来是采用铜CMP,然后进行直接浅沟槽隔离(STI)抛光。随着新材料的不断引入,CMP的创新有望跟上抛光这些材料(例如铂金)的步伐。随着CMP被广泛接受,重点已转移到提高生产率上:减少停机时间,开发具有更高去除率和产量的新型浆料和工艺。主要通过减少缺陷来提高良率也引起了关注。这是通过更好地制造和设计浆液和抛光垫,以及改进抛光工具和工艺来实现的。

著录项

  • 来源
    《Solid state technology》 |2004年第4期|p.24|共1页
  • 作者

    Gautam Grover;

  • 作者单位

    Cabot Microelectronics Corp., 870 Commons Dr., Aurora, IL 60504;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题;
  • 关键词

  • 入库时间 2022-08-18 01:36:20

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