Using a biased-ICP reactor for PR strip and Cu barrier removal

摘要

A 2-in-1 integration scheme ― in which the barrier removal and photoresist strip are done in situ following dielectric etch ― is proposed. Photoresist stripping and barrier removal on SiLK, porous SiLK, and LKD-5109 dielectric materials were evaluated with a process developed on blanket films and later optimized on patterned wafers. Pattern wafer performance was evaluated on single- and dual-damascene structures using cross-section SEM and TEM.