High-performance SiGe pHMOS using reduced-pressure CVD

摘要

A high-performance SiGe p-type metal-oxide-semiconductor heterostructure field effect transistor (pMOS-HFET or pHMOS) has been developed using a well-controlled boron delta-doping and SiGe/Si heterostructure epitaxial process with reduced-pressure chemical vapor deposition. Along with high-speed operation and excellent 1/f performance comparable to bipolar junction transistors, practical issues like power consumption and thermal dissipation will drive SiGe pHMOS technology into gigabit-scale integration in the sub-decanano generation.