Porous low-k dielectrics using ultraviolet curing

摘要

It is essential to introduce porosity in carbon-doped oxides (CDO) to extend their applications to 45nm and beyond with k < 2.5. Ultraviolet (UV) curing offers an integration- and production-worthy solution. The complexity of introducing porosity to low-k films can be mitigated by using a UV curing process that affects the chemical composition, pore size, and distribution. Such a process, including a critical in situ chamber clean, is described.