An alternative for shallow doping: gas cluster infusion

摘要

As device dimensions decrease, new methods of efficiently doping to shallow depths are required. Similar manufacturing issues exist for both the precision doping of ultra-shallow junctions (USJ) in the source drain extensions (SDE) and the p+ compensation doping of dual-line DRAM devices. In both applications, conventional beamline implantation may be reaching fundamental limitations, and many companies are exploring alternatives such as plasma doping, large molecular doping, and gas cluster infusion doping. Each of these relatively new technologies has advantages and disadvantages; here, the differentiation of the infusion process from the other techniques will be outlined.