Analyzing Si-based structures in 3D with a laser-pulsed local electrode atom probe

摘要

The addition of high-speed laser pulsing and local electrode geometry has transformed the 3D atom probe into a metrology tool that is capable of analyzing Si-based nanostructures on an atom-by-atom basis. In this work, analysis of heavily doped Si using both the voltage-pulsed and laser-pulsed scheme showed that laser-pulsed analysis provided superior mass resolution and sensitivity and was capable of analyzing undoped Si-SiGe structures. Compared to secondary ion mass spectrometry (SIMS), the laser-pulsed local electrode atom probe (LEAP) provided superior interface analysis in terms of spatial and depth resolutions, as well as quantification of Ge and B atoms within multilayer Si-SiGe stacks.