Low-k dielectric repair

摘要

Process-induced damage to porous OSG based low-k dielectrics has hampered use of these materials in adva nced logic devices. Restoration of the dielectric constant and other properties is achieved by replenishing carbon to the low-k material through a silylation reaction. The silylation material and process maximize the dielectric restoration and prevent further addition of defects. Evaluation of this process on 45nm dual-damascene structures reduced the RC time constant without degradation of other parameters. The optimized process uses standard equipment found in a typical manufacturing fab and has high throughput.