Native oxide removal for NiSi formation using remote plasma preclean

摘要

In situ NF{sub}3/NH{sub}3 remote plasma preclean enables NiSi integration in SOC devices. This new preclean technology allows reliable, production-worthy integration of NiSi for CMOS technology without plasma damage or queue-time control problems. The process has been validated using integration data, such as junction leakage and sheet resistance for Ni silicide, and has been compared with conventional HF wet clean and Ar sputter preclean processes.