Using scanner systematic signatures to enhance OPC modeling

摘要

At previous technology nodes, scanner systematic signatures-including illuminator pupil-fill and polarization, lens aberration, lens apodization, and flare-could be ignored without significantly impacting optical proximity compensation (OPC) accuracy. However, these characteristics begin to play a critical role at the 45nm node and beyond. For advanced applications, it is necessary for the OPC modeling tool and the core engine of the OPC simulator to accurately model the unique scanner systematic signatures, which must be easily incorporated to be adopted in manufacturing. OPC models created with these heightened capabilities will be able to accurately predict lithographic printing effects missed with traditional "idealized" OPC models, while alsd reducing OPC modeling time.