Etch pushes limits of physics and chemistry

摘要

At the forefront of etch technology today are several longstanding issues that create challenges for nearly every etch application, such as aspect-ratio-dependent etching and materials selectivity. Because etch is involved in forming the critical structures of every semiconductor device, resolving these issues is essential as the industry continues to scale to smaller dimensions. However, these challenges grow increasingly difficult as we face fundamental limits posed by the basic laws of physics and chemistry. To enable continued device shrinks, innovative workarounds and new solutions will be needed.