The Extrema STO (strontium titanium oxide) precursors improve manufacturers' ability to better deposit ultrahigh-k dielectric films using atomic layer deposition (ALD) for use in 22nm-15nm DRAM devices. The Extrema GST version (alloy of germanium, antimony, tellurium) can be made to change phase under the influence of temperature, to allow thermal ALD of conformal films critical to the manufacture of PRAM devices at 22nm and below.
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