Creating phase-change memory devices with GeTe thin films

摘要

With advantages including low cost, low programming voltage and excellent scalability to nanoscale cell sizes, phase-change memory (PCM) is one of the promising candidates for next-generation nonvolatile memory applications [1]. The technology is based on fast and reversible phase-change effects in chalcogenide materials (such as sulfides, selenides and tellurides), causing them to switch between crystalline and amorphous states. But the inherent instability of these materials in their amorphous states reduces the archival life of the memory cell.