EUV OPC flow optimization for volume manufacturing

摘要

Extreme ultraviolet (EUV) lithography is a leading contender for patterning of the 2X node memory and 14nm logic manufacturing and will provide significant relaxation in k1 factor versus existing 193nm lithography. However, EUV does add additional difficulties to mask synthesis flows such as across-slit shadowing variation, across-reticle flare variation, new resist effects, and significant increases in file size. This article will investigate EUV-specific issues and solution options for a production mask synthesis flow, including different correction and flow automation approaches. Improved methods help enable EUV optical proximity correction (OPC) tapeout flows to achieve comparable or better metrics than existing 193nm lithography flows.