Double-patterning, topcoat-less photoresists and silicon hard masks

摘要

Double-patterning has allowed us to push the limits of 193nm imaging, and is where leading edge photolithography stands today. The blend of incredibly low k1 imaging, improvements in scanner alignment capabilities, the ability of mask houses and designers to provide extremely complicated pattern stitching, and the move toward one directional mask layouts, have all paved the road for new and exciting materials solutions in double-patterning. The integration of double-patterning has also allowed more opportunities in the ancillary area of specialty materials with technologies such as spin-on hard masks, freezing/shrinking/slimming agents, along with immersion topcoats and topcoat-less resists.