High-productivity materials development for post-via etch residue removers

摘要

Advanced technology nodes using new materials in both BEOL low-k and FEOL high-k processes will require innovation in wet chemistries, with enhanced selectivity requirements, as well as yield performance. We have demonstrated the challenging development of an advanced Cu/low-k post-etch residue remover using combinatorial methodology. Starting from the user requirements and working through primary and secondary screening of components, mixtures and additives, the final formulations were statistically validated using electrical test. This methodology enhances the prob -ability of designing new wet chemistries to improve yield of advanced logic and memory devices.