SiC power device advantages enhance power conversion systems

摘要

Compared to silicon, SiC has ten times the dielectric breakdown field strength, three times the bandgap and three times the thermal conductivity. Three major factors are influencing the evolution and implementation of next-generation power semiconductor devices: regulatory requirements for ongoing improvements to efficiency in power conversion systems; market demands for lighter, smaller, more cost-effective systems with more integrated features and emerging new applications such as electric vehicles (EVs) and solid state transformers (SSTs). Up until recently, silicon has been the primary material used in power electronics, and although silicon technology continues to improve, it does have certain limitations that must be taken into consideration when designing for the growing list of essential power system requirements.