Strain characterization: techniques and applications

摘要

TEM-based channel strain measurements can provide insight into the effect of processing steps on channel stress, and proved very instructive in optimizing device performance. Channel strain for eSiGe devices can be affected by several process conditions, such as thickness of eSiGe, proximity, and source/drain implantation and anneal. All of them can lead to eSiGe relaxation as shown by XRD and [Raman].