Steady progress reported on HK+MG for 32nm and beyond

摘要

Different workfunctions (Wf) are needed for metals in nMOS and pMOS devices, and the HfO^sub 2^ compounds most used for the dielectrics tend to diffuse unlike the very stable SiO^sub 2^ they are replacing, pointed out Serge Biesemans, director of CMOS technology R&D, IMEC. Further, strain enhancement may be eroded as mobilities shift.