Etch performance of Ar/N^sub 2^/F^sub 2^ for CVD/ALD chamber clean

摘要

F^sub 2^ gas mixtures offer ideal properties as chamber cleaning gas: low dissociation energy and high reactivity, which leads to superior efficiency and ease of abatement. In this work, a new F^sub 2^ gas mixture with a combination ratio of 10% Ar, 20% F^sub 2^ and 70% N^sub 2^ was used to obtain a maximum of 20% fluorine in inert gases. This mixture has been evaluated as a candidate to replace conventional cleaning gases such as NF^sub 3^, C^sub 2^F^sub 6^, and CF^sub 4^.