Creating phase-change memory devices with GeTe thin films

摘要

While optimizing the Ge/Te ratio is the foundation for any process development, the ability to protect the precursors from contamination also has a significant impact on MOCVD deposition. Most metal-organic precursors induce carbon contaminants in deposited films, and GeTe is no exception. Using XPS measurements with surface-etching capability, the presence of in-film carbon contamination can easily be seen (Fig. 1).