AMAT's DRAM fab tools for denser transistors

摘要

The Applied Centura DPN HD system incorporates nitrogen atoms into the gate insulator to improve its electrical characteristics. The high- dose gate stack system for oxynitride gate scaling is said to increase DRAM periphery speeds, which enhance DRAM output. The HD technique builds on Applied's decoupled plasma nitridation (DPN) technology for advanced logic and memory fab. Decoupled plasma nitridation enables high surface nitrogen content (Fig. 1).