Hole energy levels in p-type δ-doped Si quantum wells

摘要

Electronic structure calculations in p-type B δ-doped Si quantum wells are carried out self-consistently and within the Thomas-Fermi approximation. The self consistent calculations assume both a two-independent (hh + lh) and a three independent (hh + lh + so) hole bands models. The numerically calculated spectra are compared between themselves and with experimental results, making emphasis on the effects of the inclusion of the so hole band. The Thomas-Fermi approach uses two different two-independent bands models: hh+ lh and hh+ so. Despite of the simplicity of this theory. comparison of the obtained results with experiments and self consistent theoretical calculations gives very good agreements. Again, the influence of the split-off band is highlighted and the relevance of the approximations assumed is discussed.