Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors

摘要

In this paper we report on both the DC and low frequency noise (LFN) properties of InP/InGaAs heterojunction bipolar phototransistors (HPTs) featuring waveguide type illumination. Both DC and LFN measurements demonstrate the good quality of these devices. In particular, they exhibit a l/f noise figure-of-merit of 2 ·10-8 μm~2, which is exceptionally very good in the field of the compound semiconductor HBTs, where values around 10~(-7) μm~2 are usually reported.