An analytical MOSFET breakdown model including self- heating effect

摘要

This paper presents an analytical breakdown model including self heating effect (SHE) for NMOSFET devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200℃. It is found that the device self-heating effect is suppressed when ambient temperature is increased. In addition. our results suggest that the conventional MOSFET breakdown model without considering the self heating effect can overestimate the breakdown characteristics for the short-channel devices.