Determination of the electrical properties of ultrathin silicon-based dielectric films f thermally grown SiN.

摘要

The aim of this work is to obtain the electrical properties of a leaky 2 nm ultrathin thermally grown nitride film using the classical high frequency capacitance (C(V)) measurements. The substrate Si(1 00) surface cleaned in ultrahigh vacuum is nitrided in a low pressure (1 × 10~-4 mbar) of nitric oxide (NO) gas at 1050℃. This film is characterised by Auger electron spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy and reflection electron energy loss spectroscopy. The deposition of a self-assembled insulating monolayer of organic molecules (oc- tadecyltrichlorosilane) on the nitride gives rise to a metal insulator scmiconductor structure which permits to obtain the electrical properties of the ultrathin nitride film.