Weii width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

摘要

The novel Al_0.66In_0.34As_0.85Sb_0.15/In_0.53Ga_0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double- Barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependent for Al_0.66In_0.34As_0.85Sb_0.15/In_0.53Ga_0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak Current density of 22 kA/Cm~2 at room temperature was demonstrated for the 4 nm-InGaAs-well.