Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

摘要

the finite difference method was used to analyze the thermal characteristics of continuous wave 850 nm AlGaAs/ GaAs implant-apertured vertical-cavity surface-emitting lasers (VCSELs). A novel flip-chip design was used to enhance The heat dissipation. The temperature rise in the active can be maintained below 40 deg. C at 4 mW output power with 10 MA current bias. By contrast, the temperature rise reaches above 60 deg. C without flip-chip bonding. The transient Temperature during turn-on of a VCSEL was also investigated.