Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system

摘要

In this letter, high-quality indium zinc oxide (IZO) films (60-220 nm) were first grown on hardness poly-carbonate substrate by ion-assisted deposition (IAD) dc magnetron sputtering without a post deposition annealing treatment. The electrical, optical, and structural properties of these films were investigated as a function of film thickness. IAD dc magnetron sputtering provides very uniform IZO films with high transparency (≥ 85/100 in 550 nm spectrum) and low electrical resistivity (3×10~-4 Ω cm). The Hall mobility and carrier density ofr a 120-nm-thick film at 100 W are 12 cm~2/ V s and 2.5×10~21 cm~-3, respectively.