A 0.10 μm buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket

摘要

Designs of 0.10 μm buried p-channel devices have been studied and compared. We demonstrate that silicon p- MOSFETs with n-type polysilicon gate could achieve a good control of short channel effects. Based on new channel Design optimisation using through the gate boron implantation and a tilted arsenic pocket, it is shown that buried Channels can be scaled down to 0.10 μm geometries with a satisfactory I_on/I_off ratio for 1.5 V operation: a high drive Current of 220 μA/μm at 1 nA/μm I_off was achieved by scaling down the extrinsic source/drain resistance.