Application of advanced metal-oxide-semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit

摘要

The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which has double-barriers at both edges of the channel, is examined from viewpoints of the substitution for conventional metal-oxide-semiconductor field-effect transistor in next generation circuit. The feasibility of multi(equal to or larger than three)-valued logic circuits which are composed of the p-SRTMOST and the n-SRTMOST is shown theoretically.