Computational load pull simulations of SiC microwave power transistors

摘要

The design of power transistors for microwave applications requires a good understanding of their large signal behaviour in a real circuit context. The computational load-pull simulation technique is a powerful new way to evaluate the full time-domain voltages and currents of microwave power transistors during realistic operation. With this method it is possible to relate details in the time domain voltages and currents to corresponding variations in carrier densities, electrical field, etc. in the device. We have utilised the standard device simulator Medici, directly driven by sine voltage sources on both input and output. The resulting data from the simulations was then analysed using Matlab. Several 4H-SiC MESFET structures were evaluated by this technique and we found the p-type buffer layer doping and thickness to be crucial to obtain an optimum RF power. A 4H-SiC MESFET structure was found to have an output power of 6.2 W/mm at 1 GHz.