Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET

摘要

We propose a new structure, asymmetric gate stack (ASYMGAS)-MOSFET and its 2-D analytical model. There is two-layer gate stack oxide near the drain and single gate oxide near the source. The model predicts a step function profile in the potential along the channel, which ensures reduced DIBL. In ASYMGAS-MOSFET, the average electric field in the channel is enhanced, and therefore electron velocity, near the source, which improves the overall carrier transport efficiency. The results so obtained are verified using a two-dimensional device simulator, ATLAS, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.15 μm. Thus, confirming the validity of our model.