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Terahertz self-oscillations in negative-effective-mass oscillators

机译:负有效质量振荡器中的太赫兹自激振荡

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We have theoretically investigated spatiotemporal current patterns and self-oscillating characteristics of negative-effective-mass (NEM) p~+pp~+ diodes. Periodically oscillating current densities are presented as a gray density plot, showing rich patterns with the applied bias and doping concentration as controlling parameters. Such a pattern arises in the NEM p-base with a "N-shaped" velocity-field relation. Two-dimensional applied bias-doping concentration phase diagrams at different lattice temperatures are calculated in order to visualize the effect of lattice temperature on the self-oscillating regions. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies, which are generally in the terahertz (THz) frequency band. The NEM p~+pp~+ diode may therefore be used to develop a electrically tunable THz-frequency oscillator.
机译:我们从理论上研究了负有效质量(NEM)p〜+ pp〜+二极管的时空电流模式和自激振荡特性。周期性振荡的电流密度以灰色密度图的形式显示,显示了以施加的偏置和掺杂浓度为控制参数的丰富图形。这种模式出现在具有“ N形”速度场关系的NEM p基中。计算了在不同晶格温度下的二维施加偏置掺杂浓度相图,以可视化晶格温度对自激振荡区域的影响。已经表明,所施加的偏压和掺杂浓度都强烈影响通常在太赫兹(THz)频带中的图案和自激频率。因此,NEM p〜+ pp〜+二极管可用于开发电可调的THz频率振荡器。

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