Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices

摘要

The random doping-induced fluctuations of subthreshold characteristics in MOSFET devices are analyzed. A technique for the computations of sensitivity coefficients and variances of subthreshold parameters is presented and applied to the computation of fluctuations of subthreshold current and gate-voltage swing. This technique is based on the linearization of transport equations with respect to the fluctuating quantities. It is computationally much more efficient than purely "statistical" methods (Monte-Carlo methods) that are based on the simulations of a large number of devices with different doping realizations. The numerical implementation of this technique is discussed and numerous computational results are presented.