Electron mobility and terahertz detection using silicon MOSFETs

摘要

Based on the mobility calculations, we investigate the possibility of using deep submicron silicon MOSFETs for the detection and emission of terahertz radiation via the excitation of the surface plasma waves in the device channels. This analysis shows the possibility of using the MOSFET-based terahertz detector and emitter pairs for the wireless interconnects for the future VLSI chips.