Zero-point correction of the carrier density in the measurement of MOS inversion-layer mobility

摘要

To accurately measure MOS inversion-layer mobility, the carrier density is evaluated by integrating gate-source capacitance from the gate voltage (V_(G0)) where the inversion carrier density is considered to be zero. The ambiguousness in V_(G0) determination, therefore, becomes error in the measurement of inversion-layer mobility. This short note shows that defining V_(G0) as the threshold voltage minus mS, where S is subthreshold slope and m ≥ 5, can suppress the ambiguousness in V_(G0) determination.