Rapid post-metallization annealing effects on high-κ Y_2O_3/Si capacitor

摘要

The rapid thermal annealing effects on thin Pt/Y_2O_3/Si MOS capacitors have been investigated. After post-metallization annealing at 425℃ in 30 s, the Pt/Y_2O_3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ～7.7 x 10~(10) cm~(-2) and a minimum interface state density ～3.6 x 10~(10) cm~(-2) eV~(-1). The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y_2O_3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.