Si doped p- and n-type Al_xGa_(1-x)As epilayers for high density lateral-junction LED arrays on (311)A patterned substrate

摘要

The controlled incorporation of amphoteric Si dopant for p- and n- type conductivity in Al_xGa_(1-x).As layers simultaneously grown on GaAs (311)A and (100) substrates by molecular beam epitaxy (MBE) was investigated for different Al compositions. (10-50%). The optimized growth conditions have been used to grow lateral junction (LJ) light emitting diodes (LEDs) structures on GaAs (3 11)A patterned substrate. High density (2400 device per inch) LJ-LED arrays were successfully fabricated. The electroluminescence spectrum shows a single peak around 813 nm at room temperature.