100 A-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

摘要

The tunnel injection transit time (TUNNETT) diodes with p~+p~+n~+n~-n~+ structure were fabricated by liquid phase epitaxy (LPE). About 100 A tunnel junction (p~+n~+) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of -60 dBc/Hz at 1 kHz bandwidth.